Structural, Morphological, Topographical, and Electrical Properties of Selenized Stacked CIGSe Layers by Evaporation Technique

Metallic elements copper (Cu), indium (In), and gallium (Ga) thin films for solar cell absorber layer were deposited by evaporation technique at ambient temperature and then the whole structure was selenized at various temperature ranging from 450 °C to 550 °C at different durations (30, 45 and 60 min). The effect of selenization on structural, morphological, topographical, and electrical properties of prepared films was studied. We observed a strong dependence of the properties of CIGSe films on the growth mechanism as well as the chemical composition. The results showed that 450 °C and 500 °C of selenization temperature was not sufficient for the inter-diffusion of all elements forming a good CIGSe absorber layer. Instead, the film selenized at 550 °C showed a better result which could be a good absorber layer for highly efficient CIGSe based thin film solar cells.