Contribution of Quantum Susceptance in SIS Junction Capacitance Measurement

In this paper, we present an investigation of the contribution of quantum susceptance in capacitance measurements of superconductor–insulator–superconductor tunnel junctions. We directly measured the one-port S -parameter S 11 by utilizing a 4-K probe station in combination with a network analyzer. We observed a bias voltage dependence of the measured junction susceptance which demonstrates the contribution of quantum susceptance. Calculation results performed, based on a simple equivalent circuit model, were in excellent agreement with the measurements. Experiment and analysis methods suggested here enable the quantitative verification of the contribution of quantum susceptance and are an effective way of extracting the junction's geometric capacitance.