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Low temperature DC characteristics of pseudomorphic Ga0.18 In0.82P/InP/Ga0.47In0.53As HEMT
Low temperature DC characteristics of pseudomorphic Ga0.18 In0.82P/InP/Ga0.47In0.53As HEMT
1990
Slimane Loualiche
A. Ginudi
A. Le Corre
D. Lecrosnier
Christophe Vaudry
Loic Henry
Christian Guillemot
Keywords:
Schottky barrier
Condensed matter physics
High-electron-mobility transistor
Materials science
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