Hot-Carrier induced Breakdown events from Off to On mode in NEDMOS

Extended Drain MOS (EDMOS) transistors were studied about hot-carrier (HC) degradation and its involvement in hard breakdown (BD) events as these smart power devices represent a big challenge to optimize under Off/On mode switching in RF circuits. N-channel devices with gate-length L G =0.5µm and two gate-oxide thicknesses were tested Tox= 2.3nm (GO1) and 8.5nm (GO2). The sensitivity to BD between Off-mode and HC is pointed out in GO1 through the hot-hole injections (HHI) that are involved as a function of gate-voltage V GS = V TH and V Gmax where the V TH case induces HC damage that can be used with series resistance increase (ΔR SD ) to detect BD events in the drift region. Hole trapping and interface traps are generated leading to the dominant effect of HHI, with very close generation rates between Off- and On- mode stressing. This can be used to prevent circuit aging giving warning level for confidence in AC lifetime for power amplifiers class E and class A.