RAPID THERMAL ANNEALING OF MG+ AND P+ DUALLY IMPLANTED INP

Abstract 125 keV M + ions and 160 keV P + ions were implanted at RT, 100° C and 200° C with doses ranging from 1 × 10 14 to 1 × 10 15 cm −2 to study the effect of the dual implantations on the electrical properties of Fe doped InP. The samples were characterized by electrochemical C - V measurement and RBS-channelling techniques. It has been found that Mg + + P + dual implantations into InP can result in an enhanced activation of implanted dopants. The highest peak hole concentration and dopant activation obtained in this work were 1.1 × 10 19 cm −3 and 68% in the case of Mg + + P + dual implantations at a dose of 1 × 10 15 cm −2 while that for Mg + single implantation at the same dose were 5.4 ×10 18 cm −3 and 40%. A thin n-type layer was found in the carrier concentration profile of Mg + singly implanted samples whereas there was not such a layer in that of Mg + + P + dually implanted ones. RBS spectra showed that the implantation at 100° C leads to damage similar to that in the sample implanted at 200° C. A deep penetration of Mg into InP during annealing, which is supposed to be related to the (Mg,Fe) complex, can be suppressed to some extent by P + co-implantation.