Surface charge control during high-current ion implantation: characterization with CHARM-2 sensors

M.I. Current,W. Lukaszek,M. C. Vella,Nicholas H. Tripsas

Surface charge control during high-current ion implantation: characterization with CHARM-2 sensors

1995

M.I. Current
W. Lukaszek
M. C. Vella
Nicholas H. Tripsas

Abstract Studies of the charging effects during implantation with 9200 and 9500 tools using EEPROM-based sensors, CHARM-2, are reported for 60 keV As beams.

Keywords:

EEPROM
Atomic physics
Measuring instrument
Analytical chemistry
Charge density
Ion implantation
Field-effect transistor
Chemistry
Surface charge
semiconductor materials
high current
Beam (structure)

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