Far-infrared reflectivity as a probe of point defects in Zn- and Cd-doped HgTe

We present a nondestructive method for quantitative determination of the vacancy concentration in the lattice of Hg-based semiconductor alloys with tetrahedral structure. The method is based on the identification of additional vibrational modes (AVMs) induced by lattice deformations in the far-infrared (FIR) reflectivity spectrum. Although the method is restricted by sensitivity limitations, recent FIR experimental data carried out on HgZnTe and HgCdTe samples containing Hg vacancies confirmed the presence of AVMs induced by Hg vacancies in as-grown crystals.