Low-threshold 1.3 μm GaInAsP/InP lasers grown by atmospheric-pressure MOVPE

Room-temperature pulsed operation has been achieved at and below 1.3 μm for GaInAsP/InP lasers grown by atmospheric-pressure metalorganic vapour phase epitaxy. Thresholds as low as 1.0 kA/cm 2 (for a cavity length of 1000 μm) have been obtained.