Polysilazane solution and method of manufacturing the same

PURPOSE: A method for preparing a polysilazane solution is provided to form a dense film by increasing an SiO2 conversion rate in the application of a coating solution for a semiconductor gap fill and to reduce the shrinkage ratio of the film. CONSTITUTION: A method for preparing a polysilazane solution comprises the steps of: mixing halosilane into a mixed solvent including a basic solvent and dibuthyl ether to prepare a mixed solution; reacting halosilane included in the mixture with ammonia added to the mixed solution in order to prepare a reaction solution; removing the salts from the reaction solution to prepare a filtrate; polymerizing the reaction filtrate at 60-120 °C; and removing the basic solvent from the reaction filtrate to prepare the polysilazane solution.