Czochralski growth of rare earth oxyorthosilicate single crystals. [Y-Si-O; Gd-Si-O; Cu-Si-O]

Single crystals of three Ce-doped rare earth oxyorthosilicates, Ln[sub 2](SiO[sub 4])O where Ln = Y, Gd, or Lu, were grown by the Czochralski technique. The formation of defects was strongly influenced by the crystal growth conditions for Ln = Gd but high quality boules for Ln = Y and Lu were grown under a variety of conditions. The luminescence properties of these materials reflect the interaction of the Ce[sup 3+] activator with the crystal field of the host lattice. (orig.)