In/BRBO/STO(Nb) Three-Terminal Device Using (Ba,Rb)BiO3 Superconductors

We have studied the electrical properties of a three terminal device using the (Ba,Rb)BiO3 thin film. We have succeeded in fabricating a three terminal device with a large current gain in the device structure like a metal-base transistor. A common base current gain α > 0.8 was obtained.