High speed and high gain-bandwidth-product resonant-cavity InGaAs/InAlAs avalanche photodiodes

H. Nie,C. Lenox,G. Kinsey,P. Yuan,A. L. Holmes,B.G. Streetman,Joe C. Campbell

High speed and high gain-bandwidth-product resonant-cavity InGaAs/InAlAs avalanche photodiodes

1999

H. Nie
C. Lenox
G. Kinsey
P. Yuan
A. L. Holmes
B.G. Streetman
Joe C. Campbell

An AlInAs/InGaAs resonant-cavity SACM avalanche photodiode with high external quantum efficiency (/spl sim/70%),low noise (k<0.3), a unity-gain bandwidth of 24 GHz, and a gain-bandwidth-product of 290 GHz is reported.

Keywords:

Avalanche photodiode
Quantum efficiency
Single-photon avalanche diode
Indium gallium arsenide
Bandwidth (signal processing)
Gallium arsenide
High-gain antenna
Optoelectronics
Optics
Engineering
Electronic engineering
resonant cavity

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