A 4 kbit synchronous static random access memory based upon delta-doped complementary heterostructure insulated gate field effect transistor technology

Delta-doped pseudomorphic In/sub y/Ga/sub 1-y/As channel complementary heterostructure insulated gate field effect transistor (C-HIGFET) technology has been developed for LSI complementary circuits which exhibit extremely low power dissipation while maintaining the high-speed operation characteristic of III-V heterostructure FETs. Using C-HIGFET ring oscillators with 1 mu m gate lengths, a gate delay of 206 ps was obtained with a gate standby power of only 3.96 mu W/gate and a switching-power-delay product of 145 fJ/gate. The authors have also fabricated fully functional 1 K*4 static random access memories (SRAMs) using this delta-doped C-HIGFET technology. The synchronous 1 K*4 SRAMs operate at a clock frequency of 284 MHz with a total power dissipation of only 183 mW. >