Segmented High-Purity Germanium Detectors

Segmented planar high-purity germanium detectors were developed. Segmentation of p-n junction was performed by implantation of boron (for the n-type Ge) and mechanical grooving of the Li diffusion layer (for the p-type Ge). The electric and spectrometric characteristics of each individual segment and interactions between segments were investigated. The reliability and stability of the detectors were improved by using special passivation of the crystal surfaces.