Old Web
English
Sign In
Acemap
>
Paper
>
Solution-based formation of high quality Al 2 O 3 gate dielectrics on graphene using microwave-assisted annealing
Solution-based formation of high quality Al 2 O 3 gate dielectrics on graphene using microwave-assisted annealing
2016
Kwan-Soo Kim
Goon-Ho Park
Hirokazu Fukidome
Tetsuya Suemitsu
Taiichi Otsuji
Maki Suemitsu
Keywords:
Graphene oxide paper
Graphene
Graphene nanoribbons
Dielectric
Annealing (metallurgy)
Microwave
Inorganic chemistry
Materials science
microwave assisted
Solution process
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]