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43nmCMOS技術による120mm 2 16Gb4-MLC NANDフラッシュメモリ
43nmCMOS技術による120mm 2 16Gb4-MLC NANDフラッシュメモリ
2008
Kanda Kazushige
Koyanagi Masaru
Yamamura Toshio
Hosono Koji
Yoshihara Masahiro
Miwa Toru
Kato Yosuke
Mak Alex
Chan Siu Lung
Tsai Frank
Cernea Raul
Le Binh
Makino Eiichi
Taira Takashi
Otake Hiroyuki
Kajimura Norifumi
Fujimura Susumu
Takeuchi Yoshiaki
Itoh Mikihiko
Shirakawa Masanobu
Nakamura Dai
Suzuki Yuya
Okukawa Yuki
Kojima Masatsugu
Yoneya Kazuhide
Arizono Takamichi
Hisada Toshiki
Miyamoto Shinji
Noguchi Mitsuhiro
Yaegashi Toshitake
Higashitani Masaaki
Ito Fumitoshi
Kamei Teruhiko
Hemink Gertjan
Maruyama Tooru
Ino Kazumi
Ohshima Shigeo
Keywords:
Computer science
Electrical engineering
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