Effect of annealing temperature on resistance switching and dielectric characteristics of Bi4Ti3O12 thin films

Nonvolatile of polycrystalline Bi"4Ti"3O"1"2 thin films prepared by sol-gel method were studied. The electrical characteristics and dielectric properties of Bi"4Ti"3O"1"2 films annealed at various temperatures at low-resistance and high-resistance states are described. Clear resistance switching of I"L"R"S/I"H"R"S>10^2 was observed with electric sweeps in samples that were annealed at various temperatures. The conduction mechanisms at the low resistance state (LRS) and high resistance state (HRS) are Ohmic and Space-Charge-Limited-Current (SCLC) conduction, respectively. A single phase was formed when a Bi"4Ti"3O"1"2 sample was annealed at 550^oC. Optimal condition could be obtained when annealed at 600^oC.