Polarization-insensitive MQW superluminescent emitting diodes

2004 
Polarization-insensitive high power MQW superluminescent emitting diodes (SLEDs) were fabricated at 1300 nm with a very wide bandwidth of more than 60 nm and a very low spectrum modulation of 0.1 dB by combining high quality AR coating and several proprietary technologies including tilted cavity, window region and absorption region. Polarization dependence as low as 0.2 dB and more than 12 mW output power were obtained at 250 mA. The devices were evaluated for optical coherence domain reflectometer (OCDR) applications, and the coherence function data was quite good with a coherence measurement out to 10 mm with negligible artifacts. Devices with different cavity lengths were also fabricated and analyzed.
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