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New amorphous silicon-boron alloy

1985 
Abstract A new amorphous Si 1−x B x alloy with composition x ranging from .05 to .5 was produced in an LPCVD system. This material has good semiconducting properties. Dark conductivity of the alloy is typically 10 −1 Ω −1 − cm −1 . The Hall mobility at room temperature ranges from 1 to 10 cm 2 V −1 s −1 .
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