New amorphous silicon-boron alloy
1985
Abstract A new amorphous Si 1−x B x alloy with composition x ranging from .05 to .5 was produced in an LPCVD system. This material has good semiconducting properties. Dark conductivity of the alloy is typically 10 −1 Ω −1 − cm −1 . The Hall mobility at room temperature ranges from 1 to 10 cm 2 V −1 s −1 .
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
4
References
10
Citations
NaN
KQI