The magnetic memory with a static magnetic bias field

The magnetoresistive storage element having a magnetic tunnel junction comprising a first magnetic layer and a second magnetic layer of a magnetic material, which are layered parallel one above the other and separated by a layer of non-magnetic material, said second magnetic layer is provided with a magnetically fixed magnetization, while the first magnetic layer is provided with a free magnetization that can be switched freely with respect to the fixed magnetization direction of the second magnetic layer between the fixed magnetization direction and the opposite direction, the free magnetization of the first magnetic layer magnetically coupled to a first and second respectively in is coupled to a first and second direction of current flow conduit to connect the said free magnetization, wherein the first and second power line at the location of the storage element with a cross; characterized in that the magnetoresistive memory element also about the first and / or second power line having at least a ferromagnetic casing made of a ferromagnetic material, which, when the first ...