Degradation mechanism of InAlN/GaN based HFETs under high electric field stress
2012
Degradation of InAlN/GaN based HFETs under stress for four bias conditions, namely, on-state high field
stress (hot phonon, hot electron and self heating effect), off-state high field stress (hot electron effect), onstate
low field stress (self heating effect), and reverse gate bias stress (inverse piezoelectric effect) has been
examined. The degradation is characterized by monitoring electrical properties, such as, drain current
reduction, gate lag, and low frequency noise. On-state high field stress has shown more than 50% reduction
in the drain current and approximately 25-30 dBc/Hz increase in low frequency noise after 25 hours of
stress, while other stress conditions led to much lesser degradation. It is demonstrated that the major
degradation mechanism in InAlN/GaN HFETs is the hot-phonon and hot-electron effect in the realm of
short term effects.
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