The nitride semiconductor device and manufacturing method thereof

The nitride semiconductor device comprising: a first nitride semiconductor layer (107) formed on the substrate (101), defects formed on the first nitride semiconductor layer (107) into the layer (108), and the defect introduced layer ( formed on the contact 108) having a second nitride semiconductor layer (109) introduced into the opening portion of the defect layer (108) exposed. Defect introduced layer (108) and the first nitride semiconductor layer (107) and than the second nitride semiconductor layer (109), the crystal defect density is large.