44 GHz hybrid low noise amplifiers using ion-implanted InxGa1-xAs MESFETs

Hybrid low noise amplifiers using ion-implanted In,Gal -. As MESFETs with 0.25-micron T-gates have been developed at 44 GHz. The hybrid two-stage amplifier using these ion-implanted In,Gal - .As MESFETs achieved a noise figure of 3.6 dB with an associated gain of 14.4 dB at 44 GHz. When two of these amplifiers were cascaded, the four-stage amplifier demonstrated a gain of 30.5 dB at 44 GHz and 37 dB at 40 GHz. These results, achieved using low cost ion-implantation techniques, rival the best HEMT results.