Passivation of HPGe detectors

Protective oxide coating of p-n junctions in HPGe detectors is investigated. Owing to this coating, HPGe detectors can be used, in particular, in liquid nitrogen environment without capsulation. A simple and practically feasible method for forming the protective layer by processing detectors in methanol is described. It is shown that this layer reliably protects p-n junctions of HPGe detectors from environmental impact. The characteristics of the protective oxide film are investigated using the Raman scattering method.