Analysis of High Temperature Properties of CMOS/SOI

CMOS inverter circuits were fabricated on SIMOX (Separation by Implantation of Oxygen) and BESOI (Bonding and Etch-back Silicon-on-Insulator) materials. The subthreshold characteristics of PMOS and NMOS were measured at different temperature points from room temperature to 200℃. Experiments show that the temperature dependence of the threshold voltage and the leakage current for thin film fully-depleted SIMOX devices were lower than that for thick film BESOI devices.