Room-Temperature Mid-Infrared Light-Emitting Diodes from Liquid-Phase Epitaxial InAs/InAs0.89Sb0.11/InAs0.80P0.12Sb0.08 Heterostructures

Light-emitting diodes (LEDs) in the 3 to 5 µm wavelength range have been fabricated from InAs/InAsSb/InAsPSb heterostructures grown by liquid-phase epitaxy (LPE) between 520 and 500°C. Temperature dependence of the performance for the LEDs was studied using a Fourier transform infrared (FTIR) measurement system with double modulation. Room-temperature operation of LEDs was realized. Under a peak current of 5 A (2% duty cycle), the output powers of the diodes were between 150 and 500 µW indicating their potential applications for CO2 and CO gas sensors.