Nature of Oxygen Donors and Radiation Defects in Oxygen-Doped Germanium

The nature of oxygen donors and radiation defects in oxygen-doped germanium were studied through measurements of the infrared absorption spectrum, deep level transient spectroscopy spectrum and carrier concentration. It is revealed that a new donor is not formed in oxygen-doped germanium. An A-center (interstitial oxygen-vacancy pair) forms a complex with a thermal donor in its anneallng stage at 60°C-140°C. The introduction rate of defects by 1.5 MeV electron irradiation was enhanced in thermal-donor-doped samples.