CMOS Transistsorübergangsbereiche formed by a CVD etching and deposition sequence

A method comprising: - removing a first portion of a substrate adjacent to a gate electrode to form a first transition region and a different second portion of the substrate adjacent to the gate electrode to form a second transition region in the substrate; and - forming an epitaxial layer of a crystalline material in the first transition region and in the second transition area; wherein said removing and forms in the same chamber takes place without lifting the sealing of the chamber.