Wide-wavelength range AlGaInAs laser array achieved by selective area growth on heterogenerous InP-on-Si wafer
2021
In this work, we present an advanced heterogeneous integration scheme which consists in integrating a thin InP layer by
wafer-bonding onto a silicon wafer (InPoSi) on which a regrowth step of III-V materials is implemented. Vertical p-i-n
AlGaInAs lasers obtained from a single Selective Area Growth (SAG) step on InPoSi were fabricated. Thanks to SAG,
the AlGaInAs-MQW structures successfully cover a PL range of 160 nm in the C+L band. Based on these structures, a 5-
channel laser array was fabricated. The latter successfully covers a 155 nm-wide spectral band from 1515 nm to 1670 nm
with a maximum output power of 20 mW under continuous-wave regime at 20°C. High thermal stability up to 70°C is
demonstrated with a characteristic temperature of 69°C for the lasers emitting from 1515 nm to 1600 nm.
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