MOCVD growth of highly strained InGaAs:Sb–GaAs–GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 μm emission

Abstract 1.27 μm InGaAs:Sb–GaAs–GaAsP vertical cavity surface-emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD) with superior performance. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops below ∼35% when the temperature is raised from room temperature to 70 °C. With only 5 mA of bias current, the 3 dB modulation frequency response is measured to be 8.36 GHz which is suitable for 10 Gb/s operation. The maximal bandwidth is estimated to 10.7GHz with modulation current efficiency factor (MCEF) of ∼5.25 GHz/(mA) 1/2 . The results of InGaAs:Sb–GaAs–GaAsP VCSELs can reach a performance level comparable to GaInAsN VCSELs with better thermal stability and should be considered as a very promising candidate for 1.3 μm commercial applications.