Electrical properties of n-Si /Cu Schottky diodes formed by electrodeposition

In this paper we report the electrical characteristics of the Schottky diodes formed by electrodeposition of copper on n- Si (111) from 0.2 M CuSO 4 5H 2 O + 0.5 M H 3 BO 3 (pH=2.0) solution. Electrical measurements have been carried out at room temperature. n-Si /Cu diode current-voltage characteristics display low reverse- bias leakage currents and average barrier heights of 0.59 ± 0.02 eV and 0.67 ± 0.02 eV obtained from both I - V and C - V measurements at room temperature, respectively.