Euv-lithography reflection-type mask blank

Disclosed is an EUV-lithography reflection-type mask blank that is provided with an absorber layer that has an optical constant suited for making films thinner. The EUV-lithography reflection-type mask blank, which has a reflection layer that reflects EUV light, and the absorber layer that absorbs EUV light, formed in this order, is characterized in that the aforementioned absorber layer contains palladium (Pd), and at least one member selected from the group consisting of molybdenum (Mo), tin (Sn), silver (Ag), niobium (Nb), and titanium (Ti).