BEOL compatible (300°C) TiN/TiO x /Ta/TiN 3D nanoscale (∼10nm) IMT selector

TiO x based Insulator-Metal-Transition (IMT) devices with TiN electrode were investigated for selector application. To maximize heat confinement, we adopted localized filament by breaking stoichiometric ALD TiO 2 layer. Using Ti 4 O 7 target and reduction annealing with Ta electrode, IMT layer was formed. By optimizing device structure to maximize heat confinement and oxygen stoichiometry to obtain IMT Ti 3 O 5 layer, we could maximize IMT characteristics at low threshold power. Scaling device area significantly improves the IMT characteristics. Moreover, reliable 1S1R characteristics were also confirmed.