High speed, monolithically integrated pin-HEMT photoreceiver fabricated on InP with 18 GHz bandwidth

An integrated photoreceiver using a pin photodiode and GaInAs/AlInAs HEMTs has been fabricated and characterised. The circuitry consists of a high input impedance front-end followed by an equalising second stage to compensate for the input capacitance. A bandwidth of 18 GHz was achieved which is, to the authors' knowledge, the highest reported bandwidth for an integrated photoreceiver on InP.