2.5–3.0 μm strain-compensated InAs/In x Ga 1-x As multiple quantum well lasers grown on InAlAs metamorphic buffer layers

InP-based strain-compensated InAs/In x Ga 1-x As multiple quantum well lasers emitting at 2.5–3.0 μm are realized on InAlAs metamorphic buffer layers. A long lasing wavelength up to 2.9 μm at 230 K in pulsed mode is achieved.