The study for photo-thermoelectric effect of Si-Ge-Au amorphous thin films as non-cooled type photo sensor

We have examined the feasibility for photo sensor application of Si-Ge-Au amorphous thin films. It is clarified the optimum sample preparation condition for photo sensor application. Photo sensing properties of optimum prepared samples were measured. As a result, specific sensitivity reached up to 0.019 V/W as row material. This value means that Si-Ge-Au amorphous thin film is powerful candidate for primary material of photo-thermoelectric type photo sensor.