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Pt Buried Gate E-pHEMT with High VG.ON and Reduced Surface Trap Effects
Pt Buried Gate E-pHEMT with High VG.ON and Reduced Surface Trap Effects
2006
Kyoungchul Jang
Gyungseon Seol
Sung-Won Kim
Jin-Cherl Her
Jae-Hak Lee
Kwang-Seok Seo
Keywords:
Nanotechnology
Electronic engineering
High-electron-mobility transistor
Materials science
surface trap
Optoelectronics
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