Edge protection method for achieving growth of semiconductor material having self-peeling function

The present invention discloses an edge protection method for achieving growth of a semiconductor material having a self-peeling function. The method comprises: preparing a self-peeling inserting layer on a semiconductor growth substrate; placing an edge protection ring completely covering the substrate edge on the substrate having the self-peeling inserting layer; growing a nitride semiconductor material on the substrate having the edge protection ring; and removing the edge protection ring after completing the growth to obtain the self-supporting nitride substrate material. With the edge protection method, the problem of poor self-supporting nitride substrate integrity affected by edge effect, polycrystalline deposition and the like during self-peeling nitride substrate preparation in the prior art is solved.