Angle-Resolved X-Ray Photoelectron Spectroscopy for the Characterization of GaAs(001) and Inp(001) Surfaces

Electron scattering and diffraction in X-ray photoemission spectroscopy (XPS) have been used to characterize GaAs(001) and InP(001) chemically etched surfaces. 6a(3d),As(3d), In(4d) and P(2p) photoelectrons have been observed as a function of polar angles for the two [1–10] and [110] azimuths For kinetic energy range of these photoelectrons the experimental results have been correctly predicted by the single-scattering cluster model with spherical-wave corrections. The problems of quantitative measurements in XPS have been discussed in relation with the diffraction phenomena.