for the MAR09 Meeting of The American Physical Society

semiconducting fi p 3-Bi-Si(111) and on semi-metallic Bi(0001)/Si(111), with a signiflcant delay in fllm growth after stopping Pn deposition, indicating long difiusion time. This is in contrast to the growth of Pn on SAMs, oxides or wetting layer on clean silicon surfaces. The long difiusion time could be explained by large barrier for Pn nucleation with standing-up orientation from a lying-down difiusing state due to stronger interaction between lying molecules and Bi-treated substrates.