Study of the trion spectral lines broadening in the thin Si(p)/Si(b)/ZnO film caused by the exciton-phonon interaction and other factors

Experiments were carried out to study the contribution of the phonon wing to the uniform width of exciton states localized at room temperature on surface defects of the crystal lattice of thin single-layer and three-layer films. Technological studies were carried out to reproduce the parameters of a three-layer thin textured Si (P) / Si (B) / ZnO film to create a technology for the production of femtosecond time interval recorders based on the non-Faraday rotation of the polarized vector of the stimulated photon echo. The results of technological methods for studying the physics of the formation of trion states are discussed.