High performance phosphorus-free 1.3 μm AlGaInAs/InP MQW lasers

Abstract Strain-compensated 1.3 μm AlGaInAs/InP multiquantum well (MQW) lasers with various doping concentrations in the p-AlInAs cladding layer are systematically studied. The lasers with higher doping exhibit lower series resistance, higher maximum output power, and better temperature characteristics, i.e. characteristic temperature as high as 90 K and degradation in slope efficiency as low as −0.66 dB, in the temperature range of 25°C–70°C. This is attributed to the significant reduction of electron leakage over the p-cladding layer.