Multi-channel infrared imager

The principle of construction of the multi-channel IR - CCD on the basis of vary-gap semiconductor have been considered. On an example of HgTe-CdTe solid solutions is shown, that grown epitaxial layers repeats of substrate form at using semiconductor substrate of special construction. By the subsequent treatment of the surface of obtained structure, it can be reached that the forbidden band energy in the plane of structure for each channel of device was constant (E g =const), but it is different for these channels due to gradient of Eg on thickness of epitaxial layer, which the range of spectral sensitivity of CCD channels are defined. Some peculiarities of technology for manufacturing such structures have been represented, also.