A fully integrated low-noise amplifier in SiGe 0.35 μm technology for 802.11a WIFI applications

In the last years, WIFI market has shown an incredible growth, exceeding expectations. This paper presents the design of two fully integrated LNAs using a low cost SiGe 0.35 um technology for the 5 GHz band, according to the IEEE 802.11a WIFI standard. One LNA has an asymmetric configuration and the other a balanced configuration. A comparison between the two LNAs has been made. All passives devices are on chip, including integrated inductors which have been designed by electromagnetic simulations. This work demonstrates the feasibility of a low cost silicon technology for the design of 5 GHz band circuits© (2005) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.