Geometric and electronic structure of the Cs-doped Bi2Se3(0001) surface

We acknowledge financial support from DFG through priority program SPP1666 (Topological Insulators), as well as by the University of the Basque Country (Grant Nos. GIC07IT36607 and IT-756-13), the Spanish Ministry of Science and Innovation (Grant Nos. FIS2013-48286-C02-02-P, FIS2013-48286-C02-01-P, and FIS2016-75862-P) and Tomsk State University Academic D.I. Mendeleev Fund Program in 2015 (research Grant No. 8.1.05.2015). Partial support by the Saint Petersburg State University project No. 15.61.202.2015 is also acknowledged. The study has also been supported by the Russian Science Foundation (project No. 17-12-01047) in part of the single crystal growth and structural characterization. Technical support by F. Weiss is gratefully acknowledged.