Control and Quantification of Residual Stresses in Anodically Bonded MEMS Structures

Residual stresses in anodically bonded silicon devices can result in quality control and process control deficits if the stresses are not controlled. At the same time several geometries may benefit from a controlled introduction of residual stresses. For example, long, thin structures may utilize a residual tensile stress to minimize the likelihood of buckling, while etched cavities with sharp corners can benefit from a residual compressive stress to suppress crack initiation and growth.