The no-thermal activation of the defect generation mechanism in a MOS structure

Abstract The oxide positive charge and the interface-state formation caused by a negative gate bias in a polycrystalline silicon gate-oxide-semiconductor capacitor versus injecting temperature in the range of 77–400 K is studied. It is found that the generation of both interface-states and oxide charge is temperature independent which indicates that the motion of each mobile species (as the hydrogen-related species) must be excluded. The formation of interface-states is linked to the break of SiSi or SiO distorted bonds at the Si SiO 2 interface, and the generation of the oxide positive charge to the electron-emission from pre-existing or created neutral traps.