InP, GaInAs and quantum well structures grown by adduct MOVPE

Abstract In this paper we describe the metalorganic vapor phase epitaxial growth of InP and GaInAs with the adducts TMIn-TEP and TMGa-TEP as metal precursors. The feasibility of zone refining for the purification of metalorganic adducts to semiconductor grade is demonstrated. By taking advantage of the low vapor pressures of these adducts we have grown GaInAs-InP single and multi quantum well structures with thickness L z of the active layer down to 2.5 nm. These samples have been characterized by photoluminescence and Shubnikov-De Haas experiments.