N- and P- type lateral dmosfets integration and optimization in an advance rf bicmos technology

Integration of RF power amplifier in silicon technology is a new challenge. SiGe:C HBT and RF lateral DMOS are the two main candidates to achieve this objective. A technology, which can propose these two devices at the same time, can be useful in order to combine the advantage of each. In this paper, the integration and optimization of RF N- and P-type lateral DMOSFETs in an advanced 0.25μm RF BiCMOS technology are presented. The main optimization steps on DC and RF parameters are described. Parameter trade off during optimization are highlighted: it is been shown that not only Ron and BVds must be considered; Ioff can also determine optimization. Improvement of dynamic performances by using CoSi2 instead of TiSi2 as salicide material is demonstrated on our lateral N-type DMOSFET with a 20% improvement on Fmax.