Evidence for a phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction

Daniel Dagnelund,Igor Vorona,Leonid Vlasenko,Xingjun Wang,A. Utsumi,Yuzo Furukawa,Akihiro Wakahara,Hiroo Yonezu,Irina Buyanova,Weimin Chen

Evidence for a phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction

2010

Daniel Dagnelund
Igor Vorona
Leonid Vlasenko
Xingjun Wang
A. Utsumi
Yuzo Furukawa
Akihiro Wakahara
Hiroo Yonezu
Irina Buyanova
Weimin Chen

Optically detected magnetic resonance (ODMR) studies of molecular beam epitaxial GaNP/GaP structures reveal presence of a P-related complex defect, evident from its resolved hyperfine interaction b ...

Keywords:

Annealing (metallurgy)
Molecular beam epitaxy
Heterojunction
Molecular beam
Nuclear magnetic resonance
Phosphorus
Hyperfine structure
Magnetic resonance imaging
Epitaxy
Physics
Condensed matter physics

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